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| A "sacrificial" high surface area to volume ratio film is deposited on "mother" substrate. |
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| Sacrificial layer is high-temperature stabilized and capped. |
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Devices are fabricated, with high temperature processes:
- deposition
- annealing and crystallization
- oxidation
- dopant activation
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Completed devices are covered with encapsulation medium; used as
- final substrate
- carrier substrate
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- Access vias made to remove the sacrificial layer
- Access vias can also be pre-drilled into the mother substrate
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- Chemical removal of sacrificial layer releases devices
- Structures can be incorporated to minimize stresses
- Advanced via design makes separation fast
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The separated devices can be:
- Used with the encapsulation medium as the final substrate
- Transferred to a final glass or plasic substrate
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- Tiled to make large area devices
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