The PostFlex Process produces high quality thin film transistors on flexible polymer substrates.
Electrical characteristics of separated p-channel poly-Si TFTs made with metal induced lateral crystallization and high temperature gate oxidation (W = L = 4um)
Threshhold voltage, Vth
-1.1 V
Field effect hole mobility
174 cm2/V.S.
Minimum-off current
<0.5x10-11 A/um @ Vds= -.1V
Sub-threshold swing
200 mV/dec
Maximum on/off ratio
> 108 @ Vds = -.1V
Y.Lee, H. Li and S. Fonash,
IEEE Electron Device Letters, Jan. 2003
